CMOS Sensor for RSI applications

Three CMOS sensors were developed for remote sensing instrument (RSI) applications. First device is linear CMOS Sensor for Terrain Mapping Camera (TMC). This device has 4000 elements, 7 mu m x 7 mu m of pixel size. Second device is area CMOS Sensor for Hyper Spectral Imager (HySI). The device has 512 x 256 elements and 50 mu m x 50 mu m of pixel size. Third device is multi band sensor for Remote Sensing Instrument (RSI). This device integrates five linear CMOS sensor into a single monolithic chip to form a Multiple System On Chip (MSOC) IC. The multi band sensor consists of one panchromatic (PAN) and four multi - spectral (MS) bands. The PAN is 12000 elements, 10 mu m x 10 mu m with integration time of 297 mu s +/- 5%. Each MS band is 6000 elements, 20 mu m x 20 mu m with integration time of 594 us mu s +/- 5%. Both linear and area CMOS sensor were designed and developed for Chandrayaan-1 project. The Chandrayaan-1 satellite was launched to the moon on October 22, 2008. The moon orbit height is 100 km and 20 km of swath size. The multi band sensor was designed for earth orbit. The earth orbit height is about 720 km and 24 km of swath. The low weight, low power consumption and high radiation tolerance camera requirement only can be done by CMOS Sensor technology. The detail device structure and performance of three CMOS sensors will present.