Ultralow Loss and High Extinction Ratio TM-Pass Polarizer in Silicon Photonics

被引:11
|
作者
Dhingra, Nikhil [1 ]
Dell'Olio, Francesco [2 ]
机构
[1] Univ Delhi South Campus, Dept Elect Sci, New Delhi 110021, India
[2] Polytech Univ Bari, Dept Elect & Informat Engn, I-70125 Bari, Italy
来源
IEEE PHOTONICS JOURNAL | 2020年 / 12卷 / 06期
关键词
CMOS; directional couplers; optical polarization; photonic integrated circuits; silicon photonics; FIELD;
D O I
10.1109/JPHOT.2020.3032847
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
TM-pass polarizers are pivotal components of photonic integrated circuits (PICs), especially those intended for biosensing applications. In the literature, several silicon TM-pass polarizers have been proposed, designed and experimentally demonstrated, but their insertion loss is not compatible with the current trend of silicon photonics aimed at exponentially increasing the component density within PICs. Herein, we propose and design a TM-pass polarizer whose insertion loss is carefully minimized to 0.05 dB at wavelength 1.55 mu m by utilizing a combination of an asymmetric directional coupler and a mode evolution section. The adoption of appropriate technical solutions makes this record insertion loss value compatible with a high extinction ratio equal to 38 dB. With a device footprint of only 2.5 x 20 mu m(2), the design exhibits an insertion loss less than 1.7 dB and extinction ratio better than 30 dB over a large bandwidth of 200 nm. The design assumes the constraints of a typical silicon photonics open-access technological process and a standard 220 nm silicon-on-insulator (SOI) wafer. A very low sensitivity of the achieved performance to reasonable fabrication inaccuracies is demonstrated, with a worst-case insertion loss of only 0.32 dB at wavelength 1.55 mu m.
引用
收藏
页数:11
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