A THEORETICAL AND EXPERIMENTAL DETERMINATION OF THE INTERNAL QUANTUM EFFICIENCY OF SILICON PHOTODIODES

被引：0
|
作者：
Kovalev, A. A. [1 ]
Liberman, A. A. [1 ]
Mikryukov, A. S. [1 ]
Moskalyuk, S. A. [1 ]
Ulanovskii, M. V. [1 ]
机构：
[1] All Russia Res Inst Optophys Measurements VNIIOFI, Moscow, Russia
来源：
MEASUREMENT TECHNIQUES | 2013年 / 56卷 / 09期
关键词：
semiconductor photodiode; current-voltage characteristic; internal quantum efficiency; trap detector;
D O I：
10.1007/s11018-013-0325-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A new method of processing the experimental current-voltage characteristics of photodiodes using reference points is proposed. By comparing a trap detector, developed at the All-Russia Research Institute of Optophysical Measurements based on Hamamatsu S6337 photodiodes with an HH-03-1337 trap detector, certified using a cryogenic radiometer at the PTB, an experimental value of the internal quantum efficiency of the Hamamatsu S6337 photodiode is obtained.
引用
收藏
页码：1031 / 1037
页数：7
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