Pure Logic CMOS Based Embedded Non-Volatile Random Access Memory for Low Power RFID Application

被引：0

作者：

Pan, Liyang ^{[1
]}

Luo, Xian ^{[1
]}

Yan, Yaru ^{[1
]}

Ma, Jirong ^{[1
]}

Wu, Dong ^{[1
]}

Xu, Jun ^{[1
]}

机构：

[1] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China

来源：

PROCEEDINGS OF THE IEEE 2008 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Based on a novel two-dimension array architecture, a 1.8V 0.44mm(2) 1Kbits embedded Non-Volatile Random Access Memory (NVRAM) IP is developed with 0.18 mu m standard logic CMOS process. Several high voltage solutions and circuits are proposed to improve the reliability and safety of the system. Furthermore, the power consumption for read and write operations are controlled under 312 mu A and 88 mu A respectively. The merits make it suitable for low power RFID application.

引用

页码：197 / 200

页数：4

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