Atomic Layer Deposition of Aluminum Oxide on Carboxylic Acid-Terminated Self-Assembled Monolayers

被引：48
|
作者：
Li, Meng [1 ]
Dai, Min [1 ]
Chabal, Yves J. [1 ,2 ]
机构：
[1] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA
[2] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
来源：
LANGMUIR | 2009年 / 25卷 / 04期
基金：
美国国家科学基金会;
关键词：
ALKYL MONOLAYERS; GROWTH; SILICON; NUCLEATION; TRANSPORT; SURFACE;
D O I：
10.1021/la803581k
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
In situ infrared absorption spectroscopy is used to monitor atomic layer deposition (ALD) of aluminum oxide (Al2O3) on carboxylic acid-terminated self-assembled monolayers (SAMs), Si(III)-(CH2)10-COOH (or COOH-SAMs), directly grafted on silicon (111) at similar to 100 degrees C. The quality of resulting Al2O3 films is comparable to Al2O3 on SiO2. Both the SAM film and the Si/SAM interface remain chemically stable during growth and upon post annealing to 400 degrees C, Suggesting that the tight packing of the alkyl chains and COOH-SAM head groups presents a diffusion barrier and promotes ordered nucleation for ALD.
引用
收藏
页码：1911 / 1914
页数：4
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