20 Gbps operation of membrane-based GaInAs/InP waveguide-type p-i-n photodiode bonded on Si substrate

A GaInAs/InP waveguide-type p-i-n membrane photodetector is shown to be a strong candidate for on-chip optical interconnection. A responsivity of 0.95A/W is estimated for a device length of 30 mu m. The 3 dB cutoff frequency is measured to be 13.3GHz at a reverse bias of 3 V, which is in good agreement with the observed clear eye opening pattern up to 20 Gbps for a non-return-to-zero signal. Moreover, a bit error rate of less than 1 x 10(-9) is obtained at data rates of 20 and 10 Gbps with input powers of % 10 and % 13 dBm, respectively. (c) 2018 The Japan Society of Applied Physics