Electrophoretically self-assembled mixed metal oxide-TiO2 nano-composite film structures for photoelectrochemical energy conversion: Probing of charge recombination and electron transport resistances

被引:15
|
作者
Benehkohal, Nima Parsi [1 ]
Demopoulos, George P. [1 ]
机构
[1] McGill Univ, Dept Mat Engn, Montreal, PQ H3A 2B2, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
Electrophoretic deposition; Dye sensitized solar cell; Nanocomposite film; Electron transport; Charge recombination; Electrochemical impedance spectroscopy; SENSITIZED SOLAR-CELLS; IMPROVED PERFORMANCE; TIO2; ELECTRODES; DYE; EFFICIENCY; SEMICONDUCTOR; SURFACE; LAYER; SPECTROSCOPY; ENHANCEMENT;
D O I
10.1016/j.jpowsour.2013.04.065
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Nanotitania/metal oxide composite films are prepared via the coupling of low DC voltage Electrophoretic Deposition (EPD) of P25 TiO2 nanoparticles with simultaneous electrolytic deposition of hydrous metal oxides, namely ZnO, MgO and Al2O3. The nanocomposite films are built into dye-sensitized solar cell photoanodes and their interfacial charge recombination and electronic resistances are investigated. The nano hydrous oxides were found to co-deposit (1-3 wt%) uniformly within the TiO2 film (forming island-like nanodeposits) significantly increasing film adhesion. Analysis via Electrochemical Impedance Spectroscopy and Open Circuit Voltage Decay techniques found, among the three composite films, the TiO2-Al2O3 electrode to exhibit the highest charge recombination resistance at the TiO2/electrolyte interface (R-rec) and as consequence an increase in V-oc. However, its conversion efficiency (4.14%) was the lowest because it suffered from very high electron transport resistance (R-t) in the TiO2 network. By comparison, the TiO2-MgO film resulted in 5.40% efficiency and the TiO2 ZnO film in 5.85% efficiency-both exhibiting significantly lower Re resistance. The obtained results point to the need for simultaneous optimization of the nanocomposite TiO2/metal oxide film structure in terms of high interfacial charge recombination resistance and low overall electron transport resistance. (C) 2013 Elsevier B.V. All rights reserved.
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页码:667 / 675
页数:9
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