Fabrication method for self-aligned bottom-gate oxide thin-film transistors by utilizing backside excimer-laser irradiation through substrate

被引：15

作者：

Nakata, Mitsuru ^{[1
]}

Tsuji, Hiroshi ^{[1
]}

Fujisaki, Yoshihide ^{[1
]}

Sato, Hiroto ^{[1
]}

Nakajima, Yoshiki ^{[1
]}

Takei, Tatsuya ^{[1
]}

Yamamoto, Toshihiro ^{[1
]}

Kurita, Taiichiro ^{[1
]}

机构：

[1] NHK Sci & Technol Res Labs, Setagaya Ku, Tokyo 1578510, Japan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 14期

关键词：

SEMICONDUCTORS;

D O I：

10.1063/1.4824301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method for fabricating self-aligned bottom-gate InGaZnO (IGZO) thin-film transistors (TFTs) with low parasitic capacitance by utilizing backside excimer-laser irradiation through a substrate is proposed and experimentally validated. Irradiation from the backside of the glass substrate using gate electrode as a mask reduces resistance of the IGZO film selectively for their application as source/drain regions in bottom-gate IGZO-TFTs. This method offers a wide process margin with respect to laser energy density and is applicable to large-area processing. (C) 2013 AIP Publishing LLC.

引用

页数：4

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