Screen-Printed Cu Source/Drain Electrodes for a-InGaZnO Thin-Film Transistors

被引：11

作者：

Kim, Jung-Hye ^{[1
]}

Kim, Joonwoo ^{[1
]}

Lee, Gwang Jun ^{[1
]}

Jeong, Jaewook ^{[1
]}

Choi, Byeongdae ^{[1
]}

机构：

[1] Daegu Gyeongbuk Inst Sci & Technol, Div Nano & Bio Technol, Dalseong Gun 711873, Daegu, South Korea

来源：

MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 2013年 / 586卷 / 01期

关键词：

a-IGZO; screen printing; copper ink; thin-film transistor; source/drain electrodes; oxide-based TFTs;

D O I：

10.1080/15421406.2013.853531

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report screen-printed copper source/drain electrodes for a-InGaZnO (a-IGZO) thin-film transistors (TFTs). The best electrical characteristics of the a-IGZO TFTs were a field-effect mobility of 2.06cm(2)/Vs, a threshold voltage of 3.40V, an on/off current ratio of 6.0 x 10(3)A/A, and a subthreshold swing of 7.02V/decade. Resulting TFT performances indicate that blocking the inter-diffusion of Cu and impurities is a key factor to fabricate low leakage current and high performance a-IGZO TFTs with printed Cu S/D electrodes.

引用

页码：161 / 167

页数：7

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