Initial stage of oxidation of hydrogen-terminated silicon surfaces

被引：43

作者：

Hattori, T ^{[1
]}

Aiba, T ^{[1
]}

Iijima, E ^{[1
]}

Okube, Y ^{[1
]}

Nohira, H ^{[1
]}

Tate, N ^{[1
]}

Katayama, M ^{[1
]}

机构：

[1] SHIN ETU HANDOTAI CO LTD, ANNAKA, GUMMA 37901, JAPAN

来源：

APPLIED SURFACE SCIENCE | 1996年 / 104卷

关键词：

D O I：

10.1016/S0169-4332(96)00165-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Structural changes produced by the oxidation of hydrogen-terminated Si(111)-1 x 1 and Si(100)-2 x 1 surfaces at 300 degrees C in dry oxygen under a pressure of 1 Torr were investigated by X-ray photoelectron spectroscopy (XPS) and multiple internal reflection infrared absorption spectroscopy (MIR-IRAS). Following results are obtained from the analysis and simulation of the experimental results: (1) the layer-by-layer oxidation reaction occurs locally at SiO2/Si(111) interface, while that does not occur at SiO2/Si(100) interface, however, (2) the oxidation on Si(100) surface proceeds more uniformly in atomic scale than that on Si(111) surface.

引用

页码：323 / 328

页数：6

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