Photoluminescence from ordered and disordered Si-SiGe superlattices

被引：1
|
作者：
Chang, TC
Yeh, WK
Mei, YJ
Tsai, WC
Chen, YF
机构：
[1] NATL CHIAO TUNG UNIV,DEPT ELECT ENGN,HSINCHU 300,TAIWAN
[2] NATL CHIAO TUNG UNIV,INST ELECT,HSINCHU 300,TAIWAN
[3] NATL TAIWAN UNIV,DEPT PHYS,TAIPEI,TAIWAN
来源：
OPTICAL AND QUANTUM ELECTRONICS | 1996年 / 28卷 / 10期
关键词：
D O I：
10.1007/BF00326202
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ordered (Ord-SL) and disordered (Dis-SL) Si-SiGe superlattices are grown using ultrahigh vacuum chemical vapour deposition (UHVCVD). The results of cross-sectional transmission electron microscopy (XTEM) and high-resolution double crystal x-ray diffraction (HRXRD) indicate that high quality Si-SiGe superlattices can be achieved. Well-defined band-edge excitonic luminescence is observed for the Si0.86Ge0.14-Si superlattice. Stronger phosoluminescence (PL) is observed for the Si-SiGe disordered superlattice compared with the corresponding Si-SiGe ordered superlattice. Furthermore, PL peak energy of the Dis-SL shifts to lower value with respect to the peak position of the corresponding Ord-SL. The stronger intensity of the no-phonon (NP) peak and the red shift of the PL peak are possibly a result of two probable mechanisms: (i) the tunnelling effect and (ii) the formation of localized states.
引用
收藏
页码：1295 / 1303
页数：9
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