Estimation of a base layer of drifting n-p-n transistors by an acceleration coefficient

被引：0

作者：

Frolov, AN ^{[1
]}

Shutov, SV ^{[1
]}

Shershen, AM ^{[1
]}

机构：

[1] Kherson State Univ, Kherson, Ukraine

来源：

IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOELEKTRONIKA | 2001年 / 44卷 / 11-12期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：A53 / A56

页数：4

共 50 条

[1] STABILIZATION OF N-P-N TRANSISTORS
HUGHES, KL
RADIO AND ELECTRONIC ENGINEER, 1970, 39 (06): : 341 - +
[2] OPEN-BASE BREAKDOWN IN DIFFUSED N-P-N JUNCTION TRANSISTORS
KENNEDY, DP
OBRIEN, RR
INTERNATIONAL JOURNAL OF ELECTRONICS, 1965, 18 (02) : 133 - +
[3] CHARACTERISTICS AND SCALING PROPERTIES OF N-P-N TRANSISTORS WITH A SIDEWALL BASE CONTACT STRUCTURE
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NAKAMURA, T
OKABE, T
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[4] CHARACTERISTICS AND SCALING PROPERTIES OF N-P-N TRANSISTORS WITH A SIDEWALL BASE CONTACT STRUCTURE
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[5] SILICON N-P-N GROWN JUNCTION TRANSISTORS
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[6] TEMPERATURE-DEPENDENCE OF THE NONIDEAL COMPONENT OF BASE CURRENT IN MICROPOWER N-P-N TRANSISTORS
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[7] TEMPERATURE DEPENDENCE OF THE NONIDEAL COMPONENT OF BASE CURRENT IN MICROPOWER n-p-n TRANSISTORS.
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[8] A COMPARISON OF BASE CURRENT REVERSAL AND BIPOLAR SNAPBACK IN ADVANCED N-P-N BIPOLAR-TRANSISTORS
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[9] MULTIPLICATION IN COLLECTOR JUNCTIONS OF SILICON N-P-N AND P-N-P TRANSISTORS
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SU, JL
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[10] SOME CIRCUIT PROPERTIES AND APPLICATIONS OF N-P-N TRANSISTORS
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