Evidence for Bandgap Opening in Buckled Epitaxial Graphene from Ultrafast Time-Resolved Terahertz Spectroscopy

被引：0
|
作者：
Mihnev, Momchil T. [1 ,2 ]
Wang, Feng [3 ]
Liu, Gang [4 ]
Rothwell, Sara [5 ]
Cohen, Philip I. [5 ]
Feldman, Leonard C. [4 ]
Conrad, Edward H. [3 ]
Norris, Theodore B. [1 ,2 ]
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
[2] Univ Michigan, Ctr Ultrafast Opt Sci, Ann Arbor, MI 48109 USA
[3] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
[4] Rutgers State Univ, Inst Adv Mat Devices & Nanotechnol, Piscataway, NJ 08854 USA
[5] Univ Minnesota, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA
来源：
2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2016年
关键词：
CONFINEMENT;
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Using ultrafast time-resolved THz spectroscopy, we observe two-orders-of-magnitude increase in the relaxation rate in semiconducting epitaxial graphene relative to pristine epitaxial graphene, attributed to enhancement of the optical-phonon-mediated carrier cooling and recombination over a wide range of electron temperatures. (C) 2016 Optical Society of America
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页数：2
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