Enhanced laser induced damage threshold of dielectric antireflection coatings by the introduction of one interfacial layer

被引：5
|
作者：
Wang, Congjuan [1 ]
Han, Zhaoxia [2 ]
Jin, Yunxia [1 ]
Shao, Jianda [1 ]
Fan, Zhengxiu [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, R&D Ctr Opt Thin Film Coatings, Shanghai 201800, Peoples R China
[2] Henan Univ Sci & Technol, Sch Sci, Luoyang 471003, Peoples R China
来源：
CHINESE OPTICS LETTERS | 2008年 / 6卷 / 10期
关键词：
D O I：
10.3788/COL20080610.0773
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A new method for increasing laser induced damage threshold (LIDT) of dielectric antireflection (AR) coating is proposed. Compared with AR film stack of H2.5L (H:HfO2, L:SiO2) on BK7 substance, SiO2 interfacial layer with four quarter wavelength optical thickness (QWOT) is deposited on the substrate before the preparation of H2.5L film. It is found that the introduction of SiO2 interfacial layer with a certain thickness is effective and flexible to increase the LIDT of dielectric AR coatings. The measured LIDT is enhanced by about 50%, while remaining the low reflectivity with less than 0.09% at the center wavelength of 1064 nm. Detailed mechanisms of the LIDT enhancement are discussed.
引用
收藏
页码：773 / 775
页数：3
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