Effect of post-fabrication thermal annealing on Fermi-level pinning phenomenon in metal-pentacene junctions

被引：6

作者：

Jeong, Seong-Guk ^{[1
]}

Park, Hyung-Youl ^{[1
]}

Lim, Myung-Hoon ^{[1
]}

Jung, Woo-Shik ^{[2
]}

Yu, Hyun-Yong ^{[3
]}

Roh, Yonghan ^{[1
]}

Park, Jin-Hong ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Sch Informat & Commun, Suwon 440746, Gyeonggi Do, South Korea

[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[3] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea

来源：

ORGANIC ELECTRONICS | 2012年 / 13卷 / 09期

基金：

新加坡国家研究基金会;

关键词：

Pentacene; Fermi-level pinning; Metal-pentacene; THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; TEMPERATURE; MORPHOLOGY; INJECTION; CONTACT;

D O I：

10.1016/j.orgel.2012.05.030

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, we investigated the material properties of pentacene films with XRD and AFM analyses as it were annealed from 25 to 150 degrees C in N-2 ambient. Electrical characterization of the films was also performed by transfer length method (TLM) at each temperature. These results were then correlated with the Fermi level pinning phenomenon in Al- and Ti-pentacene junctions. For both junctions, it was found that as the surface quality of the pentacene films changed with increase in annealing temperature, the hole-barrier heights (h-BH) that were modulated by Fermi level pinning were effectively reduced. (C) 2012 Elsevier B. V. All rights reserved.

引用

页码：1511 / 1515

页数：5

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