Relationship between localized wafer shape changes induced by residual stress and overlay errors

被引：18

作者：

Turner, Kevin T. ^{[1
]}

Veeraraghavan, Sathish ^{[2
]}

Sinha, Jaydeep K. ^{[2
]}

机构：

[1] Univ Penn, Dept Mech Engn & Appl Mech, Philadelphia, PA 19104 USA

[2] KLA Tencor Corp, Milpitas, CA 95035 USA

来源：

JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS | 2012年 / 11卷 / 01期

关键词：

lithography overlay; wafer shape; wafer geometry; nonuniform film residual stress; higher-order shape; residual overlay; ISSUES; STEP;

D O I：

10.1117/1.JMM.11.1.013001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The deposition of films with nonuniform residual stress can induce local changes in wafer shape and contribute to overlay errors with magnitudes that may be significant in advanced lithographic patterning processes. Understanding the fundamental relationship between residual stress, localized wafer shape changes, and overlay error is crucial for realizing new schemes to manage overlay errors, particularly at advanced nodes where feature sizes are smaller. In the present work, finite element modeling is used to quantitatively relate nonuniform residual stress in a deposited thin film to localized wafer shape changes and overlay errors. The results demonstrate that there is a strong correlation between localized shape variations induced by nonuniform residual stresses and noncorrectable overlay errors. (C) 2012 Society of Photo-Optical Instrumentation Engineers (SPIE). [DOI: 10.1117/1.JMM.11.1.013001]

引用

页数：8

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