Unique Thickness-Dependent Properties of the van der Waals Interlayer Antiferromagnet MnBi2Te4 Films

被引:486
|
作者
Otrokov, M. M. [1 ,2 ,3 ,4 ]
Rusinov, I. P. [4 ,5 ]
Blanco-Rey, M. [3 ,6 ]
Hoffmann, M. [7 ]
Vyazovskaya, A. Yu [4 ,5 ]
Eremeev, S., V [4 ,5 ,8 ]
Ernst, A. [7 ,9 ]
Echenique, P. M. [1 ,3 ,6 ]
Arnau, A. [1 ,3 ,6 ]
Chulkov, E., V [1 ,3 ,4 ,6 ]
机构
[1] Univ Basque Country, MPC, CFM, Ctr Mixto,CSIC, Donostia San Sebastian 20018, Basque Country, Spain
[2] Ikerbasque, Basque Fdn Sci, E-48011 Bilbao, Spain
[3] DIPC, Donostia San Sebastian 20018, Basque Country, Spain
[4] St Petersburg State Univ, St Petersburg 198504, Russia
[5] Tomsk State Univ, Tomsk 634050, Russia
[6] Univ Basque Country, Dept Fis Mat, Donostia San Sebastian 20080, Basque Country, Spain
[7] Johannes Kepler Univ Linz, Inst Theoret Phys, A-4040 Linz, Austria
[8] Russian Acad Sci, Inst Strength Phys & Mat Sci, Tomsk 634021, Russia
[9] Max Planck Inst Mikrostrukturphys, Weinberg 2, D-06120 Halle, Germany
基金
俄罗斯科学基金会; 俄罗斯基础研究基金会;
关键词
ELECTRONIC-STRUCTURE; SPIN; FERROMAGNETISM; CRYSTAL; SURFACES; SCHEMES; SPECTRA; SYSTEMS; ORDER; FIELD;
D O I
10.1103/PhysRevLett.122.107202
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Using density functional theory and Monte Carlo calculations, we study the thickness dependence of the magnetic and electronic properties of a van der Waals interlayer antiferromagnet in the two-dimensional limit. Considering MnBi2Te4 as a model material, we find it to demonstrate a remarkable set of thickness-dependent magnetic and topological transitions. While a single septuple layer block of MnBi2Te4 is a topologically trivial ferromagnet, the thicker films made of an odd (even) number of blocks are uncompensated (compensated) interlayer antiferromagnets, which show wide band gap quantum anomalous Hall (zero plateau quantum anomalous Hall) states. Thus, MnBi2Te4 is the first stoichiometric material predicted to realize the zero plateau quantum anomalous Hall state intrinsically. This state has been theoretically shown to host the exotic axion insulator phase.
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页数:6
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