A new compensation pixel circuit with all-p-type TFTs for AMOLED displays

被引：14
|
作者：
Yao, Ri-Hui [1 ]
Zhang, Li-Rong [2 ]
Zhou, Lei [2 ]
Wu, Wei-Jing [1 ]
机构：
[1] S China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China
[2] S China Univ Technol, Sch Elect & Informat Engn, Guangzhou 510640, Guangdong, Peoples R China
来源：
DISPLAYS | 2013年 / 34卷 / 03期
基金：
中国国家自然科学基金;
关键词：
Active-matrix organic light-emitting diode (AMOLED); Pixel circuit; Thin film transistors (TFTs); p-Type; THRESHOLD-VOLTAGE SHIFT; EMITTING DIODE DISPLAYS; THIN-FILM TRANSISTORS; SI-H TFT; BRIGHTNESS UNIFORMITY; AMORPHOUS-SILICON; DEVICES; ENHANCEMENT; DEGRADATION; TECHNOLOGY;
D O I：
10.1016/j.displa.2013.03.002
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
This paper presents a new pixel circuit with all-p-type TFTs for AMOLED displays. The proposed pixel circuit can effectively compensate for the threshold-voltage shift of the driving TFT, the degradation of OLED and the parasitic resistance of the power supply line. And thus, the brightness uniformity of AMOLED displays can be enhanced. It is shown that the nonuniformity of the OLED current with an average value of 7.3% can be achieved by the proposed pixel circuit, while that of the conventional 2T1C pixel circuit is 73%. Moreover, a high contrast ratio can be also obtained by the proposed pixel circuit since there is no light emitting except for the emission period. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：187 / 191
页数：5
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