Effects of ammonia-ambient annealing on physical and electrical characteristics of rare earth CeO2 as passivation film on silicon

被引：30
|
作者：
Quah, Hock Jin [1 ]
Hassan, Zainuriah [1 ]
Yam, Fong Kwong [2 ]
Ahmed, Naser Mahmoud [2 ]
Salleh, Mohammad Amran Mohd [3 ]
Matori, Khamirul Amin [4 ]
Lim, Way Foong [1 ]
机构：
[1] Univ Sains Malaysia, Inst Nano Optoelect Res & Technol INOR, George Town 11800, Malaysia
[2] Univ Sains Malaysia, Sch Phys, George Town 11800, Malaysia
[3] Univ Putra Malaysia, Dept Chem & Environm Engn, Upm Serdang 43400, Selangor, Malaysia
[4] Univ Putra Malaysia, Inst Adv Technol, Mat Synth & Characterizat Lab, Upm Serdang 43400, Selangor, Malaysia
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2017年 / 695卷
关键词：
Rare earth; CeO2; Ammonia annealing; Nitridation; Passivation; METAL REACTIVE OXIDE; LANTHANUM CERIUM OXIDE; GALLIUM NITRIDE; Y2O3; GATE; STRUCTURAL-PROPERTIES; OPTICAL-PROPERTIES; THIN-FILMS; HYDROGEN; PHOTOLUMINESCENCE; NANOPARTICLES;
D O I：
10.1016/j.jallcom.2016.11.339
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Effects of post-deposition annealing at 400-1000 degrees C in ammonia (NH3) gas ambient towards physical and electrical characteristics of metal-organic decomposition derived CeO2 films spin-coated on n-type Si substrates were studied. The use of NH3 annealing as N and H sources has promoted nitridation and passivation occurring at interface between the CeO2 and Si. Mixed oxidation states (Ce4+ and Ce3+) were detected in the samples via the detection of CeO2 and Ce2O3 phases, confirmed using high resolution Xray diffraction analysis, Raman, and Fourier Transform Infrared studies. An increase in nitridation effect with respect to temperature has impeded the formation of Ce2Si2O7 interfacial layer (IL) while the enhancement of passivation effect has triggered a decrease in interface trap density. Corresponding effects towards metal-oxide-semiconductor characteristics of the samples were discussed in details. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：3104 / 3115
页数：12
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