Low-voltage, high-speed AlSb InAsSb HEMTs

被引：21
|
作者：
Boos, JB [1 ]
Yang, MJ [1 ]
Bennett, BR [1 ]
Park, D [1 ]
Kruppa, W [1 ]
Bass, R [1 ]
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
来源：
ELECTRONICS LETTERS | 1999年 / 35卷 / 10期
关键词：
D O I：
10.1049/el:19990536
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Antimonide-based HEMTs have heen fabricated with an InAsSb channel. Infra-red photoluminescence measurements at 5K confirm that the addition of Sb changes the band structure from a staggered type II heterojunction lineup to a type I. These HEMTs with 0.1 mu m gate length exhibit decreased output conductance and improved voltage gain. At V-DS = 0.6V, a microwave transconductance of 700mS/mm and an output conductance of 110mS/mm were obtained corresponding to a voltage gain of 6.
引用
收藏
页码：847 / 848
页数：2
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