Role of surface effects on silicon carbide polytype stability

被引：22

作者：

Mercier, Frederic ^{[1
]}

Nishizawa, Shin-ichi ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2012年 / 360卷

关键词：

Computer simulation; Surfaces; Single crystal growth; Semiconducting materials; CHEMICAL-VAPOR-DEPOSITION; LIQUID-PHASE; GROWTH; NUCLEATION; SUBSTRATE; ORIGIN;

D O I：

10.1016/j.jcrysgro.2011.11.052

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We investigated with ab initio calculations the energetics of the most common silicon carbide (SiC) polytypes. We considered the (0001) Si face and the (000 (1) over bar) C face of 3C-, 6H-, 4H- and 2H-SiC. Our investigation reveals that the energy differences among SiC polytypes are enhanced at the surface with respect to the bulk. We discuss the relevant role played by the surface for the crystal growth of SiC. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：189 / 192

页数：4

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