Mid-Infrared Plasmonic Platform Based on n-Doped Ge-on-Si: Molecular Sensing with Germanium Nano-Antennas on Si

被引：0

作者：

Baldassarre, L. ^{[1
]}

Sakat, E. ^{[2
]}

Bollani, M. ^{[3
]}

Samarelli, A. ^{[4
]}

Gallacher, K. ^{[4
]}

Frigerio, J. ^{[5
]}

Pellegrini, G. ^{[2
]}

Giliberti, V. ^{[6
]}

Ballabio, A. ^{[4
,5
]}

Fischer, M. P. ^{[7
,8
]}

Brida, D. ^{[7
,8
]}

Isella, G. ^{[3
,5
]}

Paul, D. J. ^{[4
]}

Ortolani, M. ^{[1
]}

Biagioni, P. ^{[2
,3
]}

机构：

[1] Sapienza Univ Rome, Dept Phys, I-00185 Rome, Italy

[2] Politecn Milan, Dipartimento Fis, I-20133 Milan, Italy

[3] IFN CNR, Via Anzani 42, I-22100 Como, Italy

[4] Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland

[5] Politecn Milan, Dipartimento Fis, L NESS, I-22100 Como, Italy

[6] Ist Italiano Tecnol, Ctr Life NanoSci Sapienza, I-00185 Rome, Italy

[7] Univ Konstanz, Dept Phys, D-78457 Constance, Germany

[8] Univ Konstanz, Ctr Appl Photon, D-78457 Constance, Germany

来源：

2016 41ST INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2016年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

CMOS-compatible, heavily-doped semiconductor films are very promising for applications in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate n-type doped germanium epilayers grown on Si substrates. We design and realize Ge nanoantennas on Si substrates demonstrating the presence of localized plasmon resonances, and exploit them for molecular sensing in the mid-infrared.

引用

页数：2

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