Organic light-emitting diodes with a bipolar transport layer

被引:147
|
作者
Choong, VE
Shi, S
Curless, J
Shieh, CL
Lee, HC
So, F
Shen, J
Yang, J
机构
[1] Motorola Inc, Phoenix Corp Res Labs, Tempe, AZ 85284 USA
[2] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
[3] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA
关键词
D O I
10.1063/1.124309
中图分类号
O59 [应用物理学];
学科分类号
摘要
A structure based on a bipolar transport/emitting layer is proposed and implemented for making organic light-emitting diodes. Compared to the conventional heterojunction organic light-emitting diodes, more than a factor of six improvement in device reliability (a projected operating lifetime of 70 000 h) is achieved in the structure. The significant improvement in device lifetime is attributed to the elimination of the heterointerface present in the conventional devices which greatly affects the device reliability. (C) 1999 American Institute of Physics. [S0003-6951(99)04324-7].
引用
收藏
页码:172 / 174
页数:3
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