Competing cluster growth: The Cu/Sn/Si(111) system

被引：1

作者：

Hu, Q ^{[1
]}

Zinke-Allmang, M ^{[1
]}

Mitchell, IV ^{[1
]}

机构：

[1] Univ Western Ontario, Dept Phys & Astron, London, ON N6A 3K7, Canada

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 10期

关键词：

copper; tin; Si(111); clustering; self-similarity; Ostwald ripening;

D O I：

10.1143/JJAP.40.6029

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The phase separation competition of two thin film systems with a thermodynamic propensity toward clustering was studied. Copper and tin bilayers of approximately 40 monolayer total thickness were deposited on Si(111) surfaces, then annealed at temperatures between 300 degreesC and 600 degreesC. At intermediate ratios of Sn and Cu amounts deposited, two different shapes of clusters coexist on the Si(111) surface, while Sn covers the Cu bearing structures at higher amounts, leading to an apparent Sn Ostwald ripening growth dominated by a single characteristic length.

引用

页码：6029 / 6034

页数：6

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