Multi-State Memristors and Their Applications: An Overview

被引:20
|
作者
Wang, Chaohan [1 ]
Si, Zhaoguang [1 ]
Jiang, Xiongfei [2 ]
Malik, Adil [1 ]
Pan, Yihan [2 ]
Stathopoulos, Spyros [2 ]
Serb, Alexander [2 ]
Wang, Shiwei [2 ]
Prodromakis, Themis [2 ]
Papavassiliou, Christos [1 ]
机构
[1] Imperial Coll London, Dept Elect & Elect Engn, London SW7 2AZ, England
[2] Univ Edinburgh, Sch Engn, Edinburgh EH8 9YL, Midlothian, Scotland
基金
英国工程与自然科学研究理事会;
关键词
Memristor; RRAM; memristive circuits and systems; multi-state memristors; multi-bit RRAM; AI hardware; IN-MEMORY CHIP; MODEL; RRAM; CROSSBAR;
D O I
10.1109/JETCAS.2022.3223295
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Memristors show great potential for being integrated into CMOS technology and provide new approaches for designing computing-in-memory (CIM) systems, brain-inspired applications, trimming circuits and other topologies for the beyond-CMOS era. A crucial characteristic of the memristor is multi-state (also often referred as multibit, and multi-level) switching. Memristors are capable of representing information in an ultra-compact fashion, by storing multiple bits per device. However, certain challenges remain in multi-state memristive circuits and systems design such as device stability and peripheral circuit complexity. In this paper, we review the state of the art of multi-state memristor technologies and their associated CMOS/Memristor circuit design, and discuss the challenges regarding device imperfection factors, modelling, peripheral circuit design and layout. We present measurement results of our in-house fabricated multi-state memristor as an example to further illustrate the feasibility of applying multi-state memristors in CMOS design, and demonstrate their related future applications such as multi-state memristive memories in machine learning, memristive neuromorphic applications, trimming and tuning circuits, etc. In the end, we summarize past and present efforts done in this field and envisage the direction of multi-state memristor related research.
引用
收藏
页码:723 / 734
页数:12
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