Fabrication of nano N-doped In2Ga2ZnO7 for photocatalytic hydrogen production under visible light

被引：14
|
作者：
Martha, Satyabadi [1 ]
Parida, K. M. [1 ]
机构：
[1] CSIR Inst Minerals & Mat Technol, Colloids & Mat Chem Dept, Bhubaneswar 751013, Orissa, India
来源：
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY | 2012年 / 37卷 / 23期
关键词：
Bandgap energy; N-doped In2Ga2ZnO7; N-content; Photocatalytic hydrogen production; SOLID-SOLUTION; MIXED-OXIDE; WATER; TIO2;
D O I：
10.1016/j.ijhydene.2012.09.025
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
N-doped In2Ga2ZnO7 photocatalysts were fabricated by solid state reaction route. All the prepared photocatalysts were successfully characterised by PXRD, optical absorption spectra, SEM, TEM, XPS, BET surface area and photoresponse studies. The formation of In2Ga2ZnO7 was confirmed by the PXRD pattern. Optical absorption spectra showed that the visible light absorption of all the photocatalysts were enhanced by nitrogen doping. Among all the prepared photocatalysts, 1 wt% Pt loaded N-GaInZn-500 showed enhanced photocatalytic activity towards hydrogen evolution under visible light irradiation in presence of 10 vol% methanol solution as sacrificial agent. The excellent photocatalytic activity of N-GaInZn-500 is in agreement with N-content, bandgap energy, PL intensity and Surface area. Copyright (c) 2012, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：17936 / 17946
页数：11
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