DEPOSITION OF NANOCRYSTALLINE SILICON FILMS INTO LOW FREQUENCY INDUCTION RF DISCHARGE

被引：0

作者：

Deryzemlia, A. M. ^{[1
]}

Kryshtal, P. G. ^{[1
]}

Malykhin, D. G. ^{[1
]}

Radchenko, V. I. ^{[1
]}

Shirokov, B. M. ^{[1
]}

机构：

[1] Kharkov Inst Phys & Technol, Natl Sci Ctr, Kharkov, Ukraine

来源：

PROBLEMS OF ATOMIC SCIENCE AND TECHNOLOGY | 2014年 / 01期

关键词：

D O I：

暂无

中图分类号：

O57 [原子核物理学、高能物理学];

学科分类号：

070202 ;

摘要：

Results of experiments on obtaining nanocrystalline silicon films with the method of stimulated plasma-enhanced chemical vapor deposition (PECVD) into low frequency induction RF discharge (880 kHz) allowed in silicon tetrachloride diluted with hydrogen are presented. High rate value, as 2.41 nm/s, of silicon film deposition was achieved. X-ray diffraction phase-shift analysis was pursued, the value of unit spacing of crystalline lattice was determined and nanocrystalline silicon film structure was studied.

引用

页码：147 / 150

页数：4

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