Preparation and Thermoelectric Properties of B-Doped p-Type SiGe Alloys

被引：0

作者：

Wang Yueyue ^{[1
]}

Hu Meihua ^{[1
]}

Bi Ning ^{[2
]}

Han Pengju ^{[1
]}

Zhou Xubiao ^{[1
]}

Li Shangsheng ^{[1
]}

机构：

[1] Henan Polytech Univ, Sch Mat Sci & Engn, Jiaozuo 454003, Henan, Peoples R China

[2] Henan Polytech Univ, Coll Chem & Chem Engn, Jiaozuo 454003, Henan, Peoples R China

来源：

RARE METAL MATERIALS AND ENGINEERING | 2022年 / 51卷 / 08期

关键词：

thermoelectric materials; silicon germanium alloy; spark plasma sintering; thermal conductivity; PERFORMANCE; ENHANCEMENT;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

p-type Si80Ge20Bx(x = 0.5, 1.0, 2.0) alloys thermoelectric materials were prepared by one-step alloying method using Si, Ge and B powders as raw materials. The composition, microstructure and thermoelectric properties of the samples were characterized and analyzed. The results show that in-situ one-step alloying followed by spark plasma sintering can be realized and bulk materials can be obtained. With the increase of B doping content, the electrical conductivity increases significantly and the thermal conductivity decreases significantly. When the temperature is 950 K, the thermal conductivity is 1.79 W/(m.K). At 1050 K, ZT reaches the maximum value of 0.899. Due to the synergistic effect of ball milling and doping, different types of defects are produced in SiGe structure matrix, which result in scattering of different wavelengths of phonons, leading to the decrease of thermal conductivity of SiGe alloy.

引用

页码：2942 / 2946

页数：5

共 24 条

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