Leakage current reduction in chemical-vapor-deposited Ta2O5 films by rapid thermal annealing in N2O

被引：51
|
作者：
Sun, SC [1 ]
Chen, TF [1 ]
机构：
[1] NATL CHIAO TUNG UNIV,INST ELECTR,DEPT ELECT ENGN,HSINCHU,TAIWAN
来源：
IEEE ELECTRON DEVICE LETTERS | 1996年 / 17卷 / 07期
关键词：
D O I：
10.1109/55.506365
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This study aims to improve the electrical characteristics and reliability of low-pressure chemical vapor deposited (LPCVD) Ta2O5 films by developing a new postdeposition single-step annealing technique. Experimental results indicate that excited oxygen atoms generated by N2O decomposition can effectively repair the oxygen vacancies in the as-deposited CVD Ta2O5 film, thereby resulting in a remarkable reduction of the film's leakage current. Two other post-deposition annealing conditions are compared: rapid thermal O-2 annealing and furnace dry-O-2 annealing. The comparison reveals that RTN(2)O annealing has the lowest leakage current, superior thermal stability of electrical characteristics and the best time-dependent dielectric breakdown (TDDB) reliability.
引用
收藏
页码：355 / 357
页数：3
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