A photoelectrochemical study of anodic oxides on lead selenide surfaces in alkaline solutions

Lead selenide is a narrow gap semiconductor material. It finds applications in infrared emitting and detecting devices. Their performance is closely related to charge carrier recombination at the surface, which can be reduced by passivation, e.g. due to PbSeO3 formation by anodic oxidation in alkaline solutions. In dependence on the pretreatment of the surface, two different types of oxide formation were observed. To determine the electronic properties of the anodic oxide, the wavelength dependence of the photocurrent was investigated. The energy of the band gap of both types of anodic oxide on PbSe has been determined to be 2.4 eV for the direct and 1.8 eV for the indirect band gap. A weakening of the photocurrent generated in the bulk (PbSe) due to scattering or absorption within the oxide confirms the potential dependence of the oxide thickness for a high field growth mechanism.