electric and thermal conductivity;
molecular dynamics methods;
carbon/carbon-based materials;
TRANSPORT;
D O I:
10.1088/1674-1056/27/1/017401
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
Black phosphorus (BP) has received attention due to its own higher carrier mobility and layer dependent electronic properties, such as direct band gap. Interestingly, the single layer black phosphorus (SLBP) has had large popularity in applications related to thermoelectric, optoelectronic, and electronic devices. Here, we investigate the phonon spectrum, thermal conductivities, and stress strain effects. Robust anisotropy was mainly observed in the thermal conductivities together with the alongside zigzag (ZZ) direction value, compared to the armchair (AC) directions. We also investigated the attitude of stress that was anisotropic in both directions, and the stress effects were two times greater across the ZZ path than those in the AC direction at a low temperature. We obtained a Young's modulus of 63.77 and 20.74 GPa in the AC and ZZ directions, respectively, for a strain range of 0.01. These results had good agreement with first principle calculations. Our study here is useful and significant for the thermal tuning of phosphorus-based nanoelectronics and thermalelectric applications of phosphorus.
机构:
Department of Physics, Riphah International UniversityDepartment of Physics, Riphah International University
Afira Maryam
Ghulam Abbas
论文数: 0引用数: 0
h-index: 0
机构:
Department of Nanoscience and Nanotechnology, Research Institute of Physics and Chemistry, Chonbuk National UniversityDepartment of Physics, Riphah International University
Ghulam Abbas
Muhammad Rashid
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h-index: 0
机构:
Department of Physics, COMSATS Institute of Information TechnologyDepartment of Physics, Riphah International University
Muhammad Rashid
Atif Sattar
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h-index: 0
机构:
Department of Physics Simulation Laboratory, The Islamia University of BahawalpurDepartment of Physics, Riphah International University
机构:
Shanghai Univ, Shanghai Inst Appl Math & Mech, Shanghai Key Lab Mech Energy Engn, Shanghai 200072, Peoples R ChinaShanghai Univ, Shanghai Inst Appl Math & Mech, Shanghai Key Lab Mech Energy Engn, Shanghai 200072, Peoples R China
Jiang, Jin-Wu
Park, Harold S.
论文数: 0引用数: 0
h-index: 0
机构:
Boston Univ, Dept Mech Engn, Boston, MA 02215 USAShanghai Univ, Shanghai Inst Appl Math & Mech, Shanghai Key Lab Mech Energy Engn, Shanghai 200072, Peoples R China