The electromagnetic properties of the Mn doped Ge/Si quantum dots diodes

被引：2

作者：

Ma, Xiying ^{[1
]}

Lou, Caoxin ^{[1
]}

机构：

[1] Suzhou Univ Sci & Technol, Sch Math & Phys, Kerui Rd 1 Huqiu Sect, Suzhou 215011, Jiangsu, Peoples R China

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2013年 / 178卷 / 02期

基金：

中国国家自然科学基金;

关键词：

Ge1-xMnx QDs; Electromagnetic diode; Magnetic properties; Magnetic moment; FERROMAGNETIC SEMICONDUCTOR; ELECTRICAL-PROPERTIES;

D O I：

10.1016/j.mseb.2012.10.028

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present the electromagnetic properties of Mn doped Ge quantum dots (QDs)/Si electromagnetic diode. The Ge:Mn QDs were grown with a GeH4/Ar mixed gas under a constant flow at 500 degrees C by means of a plasma enhanced chemical vapor deposition (PECVD) process. They were then doped with different concentrations of Mn using a magnetron sputtering technique and annealed at 600 degrees C. The Ge:Mn QD samples show wildly open smooth hysteresis loops. The remnant magnetization M-r and saturation magnetic intensity M-s are functions of the doping concentration of Mn. The electromagnetic diodes fabricated in this way exhibit perfect electromagnetic, current-voltage (I-V) and capacitance-voltage (C-V) properties. The largest voltage and magnetic resistance differences with and without magnetic field are up to 4V and 169 k Omega, respectively. These electromagnetic properties of the Ge1-xMnx QDs/Si diodes can be used to make various electromagnetic devices, including switches and storages devices. (c) 2012 Elsevier B.V. All rights reserved.

引用

页码：174 / 177

页数：4

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