Crystal growth and detector performance of large size High-purity Ge crystals

被引：22

作者：

Wang, Guojian ^{[1
]}

Amman, Mark ^{[2
]}

Mei, Hao ^{[1
]}

Mei, Dongming ^{[1
]}

Irmscher, Klaus ^{[3
]}

Guan, Yutong ^{[1
]}

Yang, Gang ^{[1
]}

机构：

[1] Univ S Dakota, Dept Phys, Vermillion, SD 57069 USA

[2] Univ Calif Berkeley, Ernest Orlando Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA

[3] Leibniz Inst Crystal Growth, D-12489 Berlin, Germany

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2015年 / 39卷

关键词：

Czochralski method; Semiconducting germanium; Gamma-ray detector; GERMANIUM DETECTORS; DISLOCATION; CONTACT;

D O I：

10.1016/j.mssp.2015.04.044

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-purity germanium crystals approximately 12 cm in diameter were grown in a hydrogen atmosphere using the Czochralski method. The dislocation density of the crystals was determined to be in the range of 2000-4200 cm(-2), which meets a requirement for use as a radiation detector. The axial and radial distributions of impurities in the crystals were measured and are discussed. A planar detector was also fabricated from one of the crystals and then evaluated for electrical and spectral performance. Measurements of gamma-ray spectra from Cs-137 and Am-241 sources demonstrate that the detector has excellent energy resolution. Published by Elsevier Ltd.

引用

页码：54 / 60

页数：7

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