Design of class-E GaN HEMT power amplifier using elliptic low pass matching network with 86% efficiency

被引：8
|
作者：
Kizilbey, Oguzhan [1 ]
机构：
[1] Tubitak Bilgem, Sci & Technol Res Council Turkey, TR-41470 Gebze, Kocaeli, Turkey
来源：
IEICE ELECTRONICS EXPRESS | 2013年 / 10卷 / 02期
关键词：
GaN HEMT; high efficiency; power amplifier;
D O I：
10.1587/elex.10.20120960
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a highly efficient prototype of Gallium Nitride high electron mobility transistor (GaN HEMT) power amplifier using elliptic low pass filter output network is proposed, fabricated and measured. A fifth-order elliptic low-pass filter network is designed and implemented for the output matching, which provides optimized fundamental and harmonic impedances. Simulation and experimental results show that a Class-E PA is realized from 2.7 to 2.9 GHz with 10-W (40 dBm) output power, 10 dB gain and a measured efficiency of 86%, which is the highest reported today for such a frequency band and output power.
引用
收藏
页数：6
相关论文
共 50 条
  • [1] Design of GaN HEMT Class-E Power Amplifier for Satellite Communication
    Wang, Jingyuan
    Yu, Hongxi
    Yang, Fei
    2018 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY (ICMMT2018), 2018,
  • [2] High Efficiency Class-E tuned Doherty Amplifier using GaN HEMT
    Choi, Gil Wong
    Kim, Hyoung Jong
    Hwang, Woong Jae
    Shin, Suk Woo
    Choi, Jin Joo
    Ha, Sung Jae
    2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3, 2009, : 925 - +
  • [3] High-Efficiency GaN HEMT Power Amplifier Design Based on Inverse Class-E Topology
    Lee, Yong-Sub
    Lee, Mun-Woo
    Kam, Sang-Ho
    Jeong, Yoon-Ha
    2009 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, 2009, : 500 - 503
  • [4] A high-efficiency class-E GaN HEMT power amplifier for WCDMA applications
    Lee, Yong-Sub
    Jeong, Yoon-Ha
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2007, 17 (08) : 622 - 624
  • [5] Design and Optimization of High Efficiency GaN HEMT Class-E Power Amplifiers
    Filipek, Tomasz A.
    TENCON 2015 - 2015 IEEE REGION 10 CONFERENCE, 2015,
  • [6] High frequency GaN/AlGaN HEMT class-E power amplifier
    Islam, SS
    Anwar, AFM
    SOLID-STATE ELECTRONICS, 2002, 46 (10) : 1621 - 1625
  • [7] Broadband class-E power amplifier design using tunable output matching network
    Moloudi, Farzad
    Jahanirad, Hadi
    AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 2020, 118
  • [8] Design of Highly Efficient Broadband Class-E Power Amplifier Using Synthesized Low-Pass Matching Networks
    Chen, Kenle
    Peroulis, Dimitrios
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2011, 59 (12) : 3162 - 3173
  • [9] Design of GaN/AlGaN HEMT class-E power amplifier considering trapping and thermal effects
    Islam, SS
    Anwar, AFM
    IEEE LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS, 2002, : 155 - 163
  • [10] Comments on "Design of Highly Efficient Broadband Class-E Power Amplifier Using Synthesized Low-Pass Matching Networks"
    Cheng, Qian-Fu
    Fu, Hai-Peng
    Zhu, Shou-Kui
    Liu, Chang
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2016, 64 (05) : 1678 - 1678
12345