IR detection in wide-gap semiconductors using extreme nondegenerate two-photon absorption

被引：0
|
作者：
Pattanaik, Himansu S. [1 ]
Fishman, Dmitry A.
Webster, Scott
Hagan, David J.
Van Stryland, Eric W.
机构：
[1] Univ Cent Florida, CREOL, Coll Opt & Photon, 4000 Cent Florida Blvd, Orlando, FL 32816 USA
来源：
2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2012年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We compare GaAs and GaN for IR detection using extremely non-degenerate two-photon absorption. While the small gap material has larger ND-2PA and hence better sensitivity to IR, unwanted background from degenerate 2PA outweighs this advantage.
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页数：2
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