Epitaxial Semiconductor Quantum Wires

被引:3
|
作者
Wu, J. [1 ]
Chen, Y. H. [1 ]
Wang, Z. G. [1 ]
机构
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
基金
中国国家自然科学基金;
关键词
Epitaxy; Semiconductors; Quantum Wires;
D O I
10.1166/jnn.2008.103
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The investigation on the direct epitaxial quantum wires (QWR) using MBE or MOCVD has been persuited for more than two decades, more lengthy in history as compared with its quantum dot counterpart. Up to now, QWRs with various structural configurations have been produced with different growth methods. This is a reviewing article consisting mainly of two parts. The first part discusses QWRs of various configurations, together with laser devices based on them, in terms of the two growth mechanisms, self-ordering and self-assembling. The second part gives a brief review of the electrical and optical properties of QWRs.
引用
收藏
页码:3300 / 3314
页数:15
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