Porous anodic film formation on Al-Ti alloys in sulphuric acid

被引：15
|
作者：
Nettikaden, V. C. [1 ]
Liu, H. [1 ]
Skeldon, P. [1 ]
Thompson, G. E. [1 ]
机构：
[1] Univ Manchester, Sch Mat, Ctr Corros & Protect, Manchester M13 9PL, Lancs, England
来源：
CORROSION SCIENCE | 2012年 / 57卷
基金：
英国工程与自然科学研究理事会;
关键词：
Aluminium; Titanium; RBS; TEM; Anodic films; RUTHERFORD BACKSCATTERING; OXIDE LAYERS; GROWTH; OXIDATION; BEHAVIOR; ALUMINUM; SPECTROSCOPY; TRANSITION; EFFICIENCY; BREAKDOWN;
D O I：
10.1016/j.corsci.2011.12.035
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Anodizing of Al-Ti alloys, containing 3, 12, 15, 30 and 45 at.%Ti, is examined at 5 mA cm(-2) in 1 mol dm(-3) sulphuric acid at 293 K. Porous films are formed up to 15 at.%Ti, with titanium increasing the anodizing voltage and pore size. In contrast, a barrier-type film is formed at 30 at.%Ti, with a finely porous outer region, while at 45 at.%Ti, barrier-type film growth is accompanied by oxygen generation. Ti:Al atomic ratios in the films are similar to those in the respective alloys. Reduced levels of sulphur occur in barrier-type films compared with porous films. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码：49 / 55
页数：7
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