The influence of nano-oxide layer on magnetostriction of sensing layer in bottom spin valves

被引：3
|
作者：
Qiu, JJ
Han, GC
Li, KB
Liu, ZY
Zong, BY
Wu, YH
机构：
[1] Data Storage Inst, Singapore 117608, Singapore
[2] Natl Univ Singapore, Singapore 119260, Singapore
来源：
JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 09期
关键词：
D O I：
10.1063/1.2194117
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The magnetostriction coefficient (lambda(s)) of ultrathin sputtered polycrystalline as-deposited and annealed Ta/Ni81Fe19(t)/Ta films was studied as a function of the thickness. lambda(s) and magnetoresistance (MR) of bottom-type spin valves (SVs) with nano-oxide layer (NOL) added in the pinned layer were investigated by using NiFe, Co90Fe10, and CoFe/NiFe/CoFe layers as free layer (FL), respectively. lambda(s) of SV with NOL increased slightly except that of CoFe FL. NOLs were added at different positions to study the effects of NOL on lambda(s) of CoFe FL. All lambda(s) of CoFe FL change from negative to positive and its absolute value also increases significantly with CoFeOx related NOL added below. Our lambda(s) and surface roughness results indicated that the structure of the film not the roughness dominates lambda(s) of ultrathin FL in SVs. (C) 2006 American Institute of Physics.
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页数：4
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