Electronic transport through CNT-fluorographene-Au junction: First-principles study

被引:8
|
作者
Berdiyorov, G. R. [1 ]
Hamoudi, H. [1 ]
机构
[1] Hamad Bin Khalifa Univ, Qatar Environm & Energy Res Inst, Doha, Qatar
关键词
73; 63; -b; Fg; 40; Ns; CARBON; DIODES; CONDUCTANCE; RECTENNAS;
D O I
10.1209/0295-5075/131/17001
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Quantum transport through CNT-fluorographene-Ag junction is studied using density functional theory in combination with the Landauer-Buttiker formalism. Rectifying behavior is obtained for both single and bilayer fluorographene with rectification ratio exceeding 4. The asymmetric conductance originates from bias-dependent charge localization in the system as was revealed in transmission eigenstates analysis. These findings can be useful in developing metal-insulator-metal junctions for high-frequency applications.
引用
收藏
页数:5
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