SIMS with sample rotation: an experimental novelty or a practical necessity?

被引：0

作者：

Sykes, DE ^{[1
]}

机构：

[1] Loughborough Surface Anal Ltd, Loughborough LE11 3WS, Leics, England

来源：

SURFACE AND INTERFACE ANALYSIS | 1999年 / 28卷 / 01期

关键词：

SIMS; depth profiling;

D O I：

10.1002/(SICI)1096-9918(199908)28:1<49::AID-SIA616>3.0.CO;2-M

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The application of sample rotation during SIMS analysis of practical samples is described. It is shown that sample rotation gives improved depth resolution in profiles of metal layers on flat semiconductor substrates, allowing thin interfacial layers to be identified. For thick metal layers on non-ideal substrates, the benefits of sample rotation are less clear. Sample rotation is also shown to be useful as a simple in situ sample preparation tool for the removal of metal overlayers on semiconductor substrates where the objective of the analysis is the semiconductor material rather than the metal itself, Copyright (C) 1999 John Whey & Sons, Ltd.

引用

页码：49 / 55

页数：7

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