Dependence of the ferroelectric domain shape on the electric field of the microscope tip
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作者:
Starkov, Alexander S.
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Natl Res Univ Informat Technol Mech & Opt, Inst Refrigerat & Biotechnol, St Petersburg 197101, RussiaNatl Res Univ Informat Technol Mech & Opt, Inst Refrigerat & Biotechnol, St Petersburg 197101, Russia
Starkov, Alexander S.
[1
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Starkov, Ivan A.
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Brno Univ Technol, Res Ctr 6, Tech 12, Brno 61600, Czech RepublicNatl Res Univ Informat Technol Mech & Opt, Inst Refrigerat & Biotechnol, St Petersburg 197101, Russia
Starkov, Ivan A.
[2
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机构:
[1] Natl Res Univ Informat Technol Mech & Opt, Inst Refrigerat & Biotechnol, St Petersburg 197101, Russia
[2] Brno Univ Technol, Res Ctr 6, Tech 12, Brno 61600, Czech Republic
A theory of an equilibrium shape of the domain formed in an electric field of a scanning force microscope (SFM) tip is proposed. We do not assume a priori that the domain has a fixed form. The shape of the domain is defined by the minimum of the free energy of the ferroelectric. This energy includes the energy of the depolarization field, the energy of the domain wall, and the energy of the interaction between the domain and the electric field of the SFM tip. The contributions of the apex and conical part of the tip are examined. Moreover, in the proposed approach, any narrow tip can be considered. The surface energy is determined on the basis of the Ginzburg-Landau-Devonshire theory and takes into account the curvature of the domain wall. The variation of the free energy with respect to the domain shape leads to an integro-differential equation, which must be solved numerically. Model results are illustrated for lithium tantalate ceramics. (C) 2015 AIP Publishing LLC.
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Department of Electrical Engineering-Physical Electronics, School of Engineering, Tel Aviv University, Ramat-Aviv 69978, IsraelDepartment of Electrical Engineering-Physical Electronics, School of Engineering, Tel Aviv University, Ramat-Aviv 69978, Israel
Agronin, A.
Molotskii, M.
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Department of Electrical Engineering-Physical Electronics, School of Engineering, Tel Aviv University, Ramat-Aviv 69978, IsraelDepartment of Electrical Engineering-Physical Electronics, School of Engineering, Tel Aviv University, Ramat-Aviv 69978, Israel
Molotskii, M.
Rosenwaks, Y.
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Department of Electrical Engineering-Physical Electronics, School of Engineering, Tel Aviv University, Ramat-Aviv 69978, IsraelDepartment of Electrical Engineering-Physical Electronics, School of Engineering, Tel Aviv University, Ramat-Aviv 69978, Israel
Rosenwaks, Y.
Rosenman, G.
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Department of Electrical Engineering-Physical Electronics, School of Engineering, Tel Aviv University, Ramat-Aviv 69978, IsraelDepartment of Electrical Engineering-Physical Electronics, School of Engineering, Tel Aviv University, Ramat-Aviv 69978, Israel
Rosenman, G.
Rodriguez, B.J.
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Departments of Physics and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695Department of Electrical Engineering-Physical Electronics, School of Engineering, Tel Aviv University, Ramat-Aviv 69978, Israel
Rodriguez, B.J.
Kingon, A.I.
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Departments of Physics and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695Department of Electrical Engineering-Physical Electronics, School of Engineering, Tel Aviv University, Ramat-Aviv 69978, Israel
Kingon, A.I.
Gruverman, A.
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Departments of Physics and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695Department of Electrical Engineering-Physical Electronics, School of Engineering, Tel Aviv University, Ramat-Aviv 69978, Israel