Decrease in surface states on GaAs metal-semiconductor field-effect transistor by high temperature operation

被引：5

作者：

Sasaki, H ^{[1
]}

Hayashi, K ^{[1
]}

Fujioka, T ^{[1
]}

Mizuguchi, K ^{[1
]}

Yea, B ^{[1
]}

Osaki, T ^{[1
]}

Sugahara, K ^{[1
]}

Konishi, R ^{[1
]}

Kasada, H ^{[1
]}

Ando, K ^{[1
]}

机构：

[1] TOTTORI UNIV,FAC ENGN,TOTTORI 680,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 4A期

关键词：

GaAs MESFET; surface state; interface state; reliability; drain current transient; hot carrier; impact ionization;

D O I：

10.1143/JJAP.36.2068

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The decrease mechanism of plasma-induced surface states in a GaAs metal-semiconductor field-effect transistor (MESFET) during high temperature operation has been studied by means of high temperature operational tests, drain current transient analysis and three-terminal gate current measurements. The energy level of trapped electrons in the surface states distributes widely in the band-gap, and its activation energy does not change alter decreasing the density of surface states. Ln order to decrease the surface states effectively, hot-carriers generated by accelerated channel electrons under high temperature operation are required.

引用

页码：2068 / 2072

页数：5

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