Adsorption of xenon on purified HiPco single walled carbon nanotubes

被引:23
|
作者
Rawat, DS [1 ]
Heroux, L [1 ]
Krungleviciute, V [1 ]
Migone, AD [1 ]
机构
[1] So Illinois Univ, Dept Phys, Carbondale, IL 62901 USA
关键词
D O I
10.1021/la052127d
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We have measured adsorption of xenon on purified HiPco single-walled carbon nanotubes (SWNTs) for coverages in the first layer. We compare the results on this substrate to those our group obtained in earlier measurements on lower purity arc-discharge produced nanotubes. To obtain an estimate for the binding energy of Xe, we measured five low-coverage isotherms for temperatures between 220 and 260 K. We determined a value of 256 meV for the binding energy; this value is 9% lower than the value we found for arc discharge nanotubes and is 1.59 times the value found for this quantity on planar graphite. We have measured five full monolayer isotherms between 150 and 175 K. We have used these data to obtain the coverage dependence of the isosteric heat. The experimental values obtained are compared with previously published computer simulation results for this quantity.
引用
收藏
页码:234 / 238
页数:5
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