Electrically Pumped GaSb-based VCSEL with Buried Tunnel Junction

被引：0
|
作者：
Bachmann, A. [1 ]
Lim, T. [1 ]
Kashani-Shirazi, K. [1 ]
Dier, O. [1 ]
Lauer, C. [1 ]
Amann, M. -C. [1 ]
机构：
[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
来源：
2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9 | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present the concept and first results of a continuous wave room temperature operating electrically pumped GaSb-based VCSEL with buried tunnel junction as current aperture. Laser emission has been achieved at 2.3 mu m. (C) 2008 Optical Society of America
引用
收藏
页码：1752 / 1753
页数：2
相关论文
共 50 条
  • [1] GaSb-based Electrically Pumped VCSEL with Buried Tunnel Junction Operating Continuous Wave up to 50°C
    Bachmann, A.
    Kashani-Shirazi, K.
    Amann, M. -C.
    2008 IEEE 21ST INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, 2008, : 39 - 40
  • [2] Long wavelength electrically pumped GaSb-based Buried Tunnel Junction VCSELs
    Bachmann, Alexander
    Arafin, Shamsul
    Kashani-Shirazi, Kaveh
    Amann, Markus-Christian
    PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND SYSTEMS, 2010, 3 (02): : 1155 - 1159
  • [3] GaSb-Based VCSEL With Buried Tunnel Junction for Emission Around 2.3 μm
    Bachmann, Alexander
    Kashani-Shirazi, Kaveh
    Arafin, Shamsul
    Amann, Markus-Christian
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2009, 15 (03) : 933 - 940
  • [4] Electiroluminescence from electrically pumped GaSb-based VCSELs
    Dier, O.
    Lauer, C.
    Bachmann, A.
    Lim, T.
    Kashani, K.
    Amann, M. -C.
    NARROW GAP SEMICONDUCTORS 2007, 2008, 119 : 139 - 141
  • [5] Single-mode Continuous Wave Operation of Electrically Pumped 2.25 μm GaSb-based VCSEL
    Bachmann, A.
    Kashani-Shirazi, K.
    Lim, T.
    Dier, O.
    Lauer, C.
    Amann, M. -C.
    2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2008, : 495 - 497
  • [6] Comprehensive analysis of electrically-pumped GaSb-based VCSELs
    Arafin, S.
    Bachmann, A.
    Vizbaras, K.
    Hangauer, A.
    Gustavsson, J.
    Bengtsson, J.
    Larsson, A.
    Amann, M. -C.
    OPTICS EXPRESS, 2011, 19 (18): : 17267 - 17282
  • [7] Investigation of Scattering Losses in a Buried Tunnel Junction 4 μm GaSb VCSEL
    Simaz, Andrea
    Debernardi, Pierluigi
    Beshara, Mina
    Belkin, Mikhail A.
    2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS EUROPE & EUROPEAN QUANTUM ELECTRONICS CONFERENCE (CLEO/EUROPE-EQEC), 2021,
  • [8] 2.34 μm electrically-pumped VECSEL with buried tunnel junction
    Harkonen, Antti
    Bachmann, Alexander
    Arafin, Shamsul
    Haring, Kimmo
    Viheriala, Jukka
    Guina, Mircea
    Amann, Markus-Christian
    SEMICONDUCTOR LASERS AND LASER DYNAMICS IV, 2010, 7720
  • [9] Optically pumped GaSb-based VECSELs
    Schulz, N.
    Rattunde, M.
    Roesener, B.
    Manz, C.
    Koehler, K.
    Wagner, J.
    NARROW GAP SEMICONDUCTORS 2007, 2008, 119 : 187 - 192
  • [10] Transverse-Mode Characteristics of GaSb-Based VCSELs With Buried-Tunnel Junctions
    Arafin, Shamsul
    Bachmann, Alexander
    Amann, Markus-Christian
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2011, 17 (06) : 1576 - 1583
12345