Low Gate Capacitance IEGT with Trench Shield Emitter (IEGT-TSE) Realizing High Frequency Operation

被引：0

作者：

Matsushita, Ken'ichi ^{[1
]}

Ninomiya, Hideaki ^{[1
]}

Naijo, Tatsuo ^{[1
]}

Izumi, Masato ^{[1
]}

Umekawa, Shinichi ^{[1
]}

机构：

[1] Toshiba Co Ltd, Semicond & Storage Prod Co, Taishi, Hyogo 6711595, Japan

来源：

2013 25TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2013年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel IEGT (Injection Enhanced Gate Transistor) design for drastically reducing of gate capacitance has been proposed in this work. The device structure named IEGT-TSE (IEGT with Trench Shield Emitter) has a dummy trench electrode connected to an emitter electrode. It shields gate electrode from floating p-well during switching. To demonstrate this effect, we exhibit switching waveforms by a numerical simulation and a fabricated device at 1200 blocking voltage class.

引用

页码：269 / 272

页数：4

共 12 条

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