Improvement of optical properties of air-exposed regrowth interfaces embedded in InAs quantum dots and GaAs/AlGaAs quantum wells by atomic hydrogen

被引：12

作者：

Kim, JS ^{[1
]}

Kawabe, M ^{[1
]}

Koguchi, N ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 3050047, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 1A-B期

关键词：

atomic hydrogen etching/cleaning; GaAs quantum wells (QWs); InAs quantum dots (QDs); regrowth; photoluminescence (PL); molecular beam epitaxy (MBE);

D O I：

10.1143/JJAP.43.L103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report an atomic hydrogen cleaning effect on surface oxide and contaminants on airexposed interfaces embedded in GaAs quantum well (QW) and InAs quantum dot (QD). A partly grown GaAs QW and a GaAs buffer layer for InAs QDs were airexposed and hydrogen cleaned. After this procedure, we directly regrew a GaAs QW and InAs QDs as an active layer. Removal of surface oxide was monitored by reflection high-energy electron diffraction. The cleaned surface showed beta(2 x 4) reconstruction. The photoluminescence properties of GaAs/AlGaAs QWs and InAs/GaAs QDs showed no degradation compared with those of the reference samples, even though the air-exposed interfaces were included in the active regions.

引用

页码：L103 / L104

页数：2

共 50 条

[1] Improvement of Optical Properties of Air-Exposed Regrowth Interfaces Embedded in InAs Quantum Dots and GaAs/AlGaAs Quantum Wells by Atomic Hydrogen
Kim, J.S. (Jongsu.KIM@nims.go.jp), 1600, Japan Society of Applied Physics (43):
[2] Effect of carriers transfer behavior on the optical properties of InAs quantum dots embedded in AlGaAs/GaAs heterojunction
Khmissi, H.
Sfaxi, L.
Bouzaiene, L.
Saidi, F.
Maaref, H.
Bru-Chevallier, C.
JOURNAL OF APPLIED PHYSICS, 2010, 107 (07)
[3] Emission of InAs quantum dots embedded in InGaAs/InAlGaAs/GaAs quantum wells
Tamayo, R. Cisneros
Moreno, I. J. Guerrero
Polupan, G.
Torchynska, T. V.
Gomez, J. Palacios
JOURNAL OF LUMINESCENCE, 2014, 149 : 1 - 6
[4] Optical properties of individual GaAs quantum dots embedded into AlGaAs nanowires
Platonov A.V.
Kochereshko V.P.
Kats V.N.
Tsyrlin G.E.
Buravlev A.D.
Samsonenko Y.B.
Besombes L.
Mariette H.
Journal of Surface Investigation, 2013, 7 (04): : 622 - 625
[5] Structural and optical properties of GaAs/AlGaAs superlattice layer on InAs quantum dots
Jeong, Y
Choi, H
Park, Y
Hwang, S
Yoon, JJ
Lee, J
Leem, JY
Jeon, M
JOURNAL OF CRYSTAL GROWTH, 2004, 273 (1-2) : 129 - 135
[6] Light emission, absorption and amplification in InAs/GaAs quantum dots and GaAs/AlGaAs quantum wells resulting from optical pumping
Firsov, D. A.
Vorobjev, L. E.
Barzilovich, M. A.
Panevin, V. Yu.
Mikhaylov, I. V.
Fedosov, N. K.
Shalygin, V. A.
Tonkikh, A. A.
Polyakov, N. K.
Samsonenko, Yu. B.
Cirlin, G. E.
Zhukov, A. E.
Pikhtin, N. A.
Tarasov, I. S.
Ustinov, V. M.
Julien, F. H.
Sekowski, M.
Hanna, S.
Seilmeier, A.
INTERNATIONAL JOURNAL OF NANOSCIENCE, VOL 6, NOS 3 AND 4, 2007, 6 (3-4): : 241 - +
[7] Photoluminescence of InAs quantum dots embedded in AlGaAs/InGaAs quantum wells with strain reducing layer
Cisneros Tamayo, R.
Torchynska, T. V.
Polupan, G.
Guerrero Moreno, I. J.
Velazquez Lozada, E.
Shcherbyna, L.
SUPERLATTICES AND MICROSTRUCTURES, 2014, 71 : 168 - 176
[8] Emission and elastic strain in InGaAs/GaAs quantum wells with embedded InAs quantum dots
Vega-Macotela, L. G.
Polupan, G.
Shcherbyna, Ye.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 7, 2012, 9 (07): : 1543 - 1545
[9] Optical study of GaAs quantum dots embedded into AlGaAs nanowires
Kats, V. N.
Kochereshko, V. P.
Platonov, A. V.
Chizhova, T. V.
Cirlin, G. E.
Bouravleuv, A. D.
Samsonenko, Yu B.
Soshnikov, I. P.
Ubyivovk, E. V.
Bleuse, J.
Mariette, H.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (01)
[10] Structural and optical properties of InAs quantum dots regrown on atomic hydrogen-cleaned GaAs surface
Kim, JS
Kawabe, M
Koguchi, N
Lee, DY
Kim, JS
Bae, IH
APPLIED PHYSICS LETTERS, 2005, 87 (26) : 1 - 3

← 1 2 3 4 5 →