High-performance amorphous organic semiconductor-based vertical field-effect transistors and light-emitting transistors

Herein, two kinds of vertical organic optoelectronic devices, vertical organic field-effect transistors (VOFETs) and light-emitting transistors (VOLETs), were constructed based on amorphous organic semiconductors ofN,N '-di(1-naphthyl)-N,N '-diphenyl-(1,1 '-biphenyl)-4,4 '-diamine (NPB) as hole injecting and transport layers and tris(8-hydroxy-quinolinato) aluminum (Alq(3)) as the emitting layer. High device performances with a large on/off ratio of similar to 6 x 10(3), current density of similar to 40 mA cm(-2), and fast response of similar to 5 ms at a frequency of 20 Hz and a brightness of 126 cd m(-2)were demonstrated for these two vertical devices with good device stability and repeatability. These results suggest the potential applications of amorphous organic semiconductors with good film-forming characteristics and easy device fabrication ability in vertical optoelectronic circuits.