Evaluation of mobility gaps and density of localized hole states in p-Ge/Ge1-xSix heterostructures in the quantum Hall effect mode

被引：5
|
作者：
Arapov, YG
Kuznetsov, OA
Neverov, VN
Kharus, GI
Shelushinina, NG
Yakunin, MV
机构：
[1] Russian Acad Sci, Inst Met Phys, Ural Div, Ekaterinburg 620219, Russia
[2] Nizhni Novgorod State Univ, Physicotech Res Inst, Nizhnii Novgorod 603600, Russia
来源：
SEMICONDUCTORS | 2002年 / 36卷 / 05期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/1.1478542
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The temperature (0.1 K less than or similar to T less than or similar to 20 K) and magnetic field (0 T less than or similar to B less than or similar to 12 T) dependences of the longitudinal (rho(xx)) and Hall (rho(xy)) resistivities have been studied in detail for p-Ge/Ge1 - xSix (x = 0.07) multilayer heterostructures with hole density p = (2.4-2.6) x 10(11) cm(-2) and mobility mu = (1.1-1.7) x 10(4) cm(2) V-1 s(-1). The energy spectrum parameters of two-dimensional (2D) hole gas in the quantum Hall effect mode have been determined. The mobility gap W = (2-2.5) meV and the background density of localized states g(c) = (5-7) x 10(10) cm(-2) meV(-1) for the filling factors nu = 1 and 2. The results are discussed in terms of long-range impurity potential models for selectively doped 2D systems. (C) 2002 MAIK "Nauka / Interperiodica".
引用
收藏
页码：519 / 526
页数：8
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