Fe-doped InGaAs/InGaAsP photorefractive multiple quantum well devices operating at 1.55 mu m

被引：14
|
作者：
DeMatos, C [1 ]
LaCorre, A [1 ]
LHaridon, H [1 ]
Gosselin, S [1 ]
Lambert, B [1 ]
机构：
[1] INSA,PHYS SOLIDES LAB,F-35043 RENNES,FRANCE
来源：
APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 26期
关键词：
D O I：
10.1063/1.119242
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Results on semi-insulating photorefractive multiple quantum well (MQW) devices operating without trapping layers are reported. The device structure consists of a MQW doped with Fe (10(17) cm(-3)) isolated from the doped contact by intrinsic standoff layers. The photocarriers generated by the pump pulse are trapped in the MQW and screen the applied electric field in the MQW. Output diffraction efficiency of 0.2% is measured in a nondegenerate four-wave-mixing configuration and the rise time of the diffraction signal reaches 200 ns. (C) 1997 American Institute of Physics.
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收藏
页码：3591 / 3593
页数：3
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