Micro-Photoluminescence from a Single InGaN-based Nano-Pillar Fabricated by Focused Ion Beam Milling

被引：0
|
作者：
Yen, H. H. [1 ]
Chiu, C. H. [1 ]
Yu, Peichen [1 ]
Kao, C. C. [1 ]
Lin, C. [1 ]
Kuo, H. C. [1 ]
Lu, T. C. [1 ]
Wang, S. C. [1 ]
Yeh, W. Y. [2 ]
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu, Taiwan
[2] Ind Technol Res Inst, Elect & Optoelect Res Labs, Hsinchu 310, Taiwan
来源：
2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9 | 2008年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Micro-photoluminescence from GaN/InGAN multiple quantum wells embedded in a nano-pillar structure with a diameter of 300nm is characterized. The emission spectrum shows a blue shift of 68.3 meV in energy due to strain relaxation. (c) 2008 Optical Society of America
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页码：1327 / +
页数：2
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